The Industry's first Mass-Produced SiC MOS Module, without a Schottky Diode - WALB.com, Albany News, Weather, Sports

The Industry's first Mass-Produced SiC MOS Module, without a Schottky Diode

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SOURCE ROHM Semiconductor

Reduced power loss makes it ideal for 1200V/180A inverters

SAN DIEGO, March 19, 2013 /PRNewswire/ -- ROHM has started mass-production of a 1200V/180A-rated SiC MOS module BSM180D12P2C101 for inverters/converters used in industrial equipment, photovoltaic power conditioners and the like.

(Photo: http://photos.prnewswire.com/prnh/20130319/LA79447)

This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness. Next-generation SiC MOSFET technology is utilized to minimize conduction degradation of the body diode, eliminating the need for diode rectification. This makes it possible to increase the mounting area for higher current handling capability while maintaining the same compact form factor.

In addition, by improving processes and device structures related to crystal defects ROHM was able to overcome all problems related to reliability, including that of the body diode. The result is 50% less loss compared with conventional Si IGBTs used in general-purpose inverters. This decreased loss, along with an operating frequency greater than 50kHz, ensures compatibility with smaller peripheral components for greater end-product miniaturization.

Key Features

  1. Switching characteristics maintained using a simple MOS structure for minimal switching loss with no tail current
    Switching characteristics are maintained even without an SBD. And unlike Si IGBTs, no tail current is generated, reducing loss by more than 50% for greater energy savings. In addition, switching frequencies over 50kHz are supported (impossible with Si IGBTs), contributing to smaller, lighter peripheral devices.
  2. Reverse conduction possible for high efficiency synchronous rectification
    General-purpose Si IGBT devices are not capable of conduction in the reverse direction. In contrast, the body diode in ROHM's SiC MOSFET always conducts in reverse. Also, depending on the Gate signal input the MOSFET can operate in either direction for lower ON resistance vs. using just the diode. These reverse direction conduction characteristics allow for high efficiency synchronous rectification in the 1000V range – higher than diode rectification.
  3. Body diode conduction degradation eliminated, enabling conduction over 1000 hours with no performance loss
    Clarifying the mechanism by which defects are spread based on body diode conduction makes it possible to minimize the primary factors through process and device construction. With general-purpose products the ON resistance increases significantly after 20 hours. In contrast, ROHM's new module ensures no ON resistance increases – even after more than 1000 hours.

For price and availability, contact SalesInquiries@rohmsemiconductor.com

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